Toshiba Starts New NAND Fab Construction, Forms Partnership with SanDisk
July 16, 2010
Toshiba
announced the establishment of a new NAND flash memory fab, located at Toshiba's
Yokkaichi Operations, on July 14, 2010, according to a press release by Toshiba.
Dubbed Fab 5, the new plant is expected to employ 20nm process technology at
start-up. Toshiba also said that the company has signed an agreement with
SanDisk for a joint venture to operate in the Fab 5. The construction on the Fab
5 is slated for completion in the spring of 2011, with a total area of around
38,000 square meters.